| PART |
Description |
Maker |
| HYB39S256160AT |
256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4× 4M× 16)同步动态RAM)
|
SIEMENS AG
|
| HYB39S256160CT |
256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4× 4M× 16)同步动态RAM)
|
SIEMENS AG
|
| FM22LD16-55-BG FM22LD16-55-BGTR |
4Mbit F-RAM Memory
|
Cypress Semiconductor
|
| M3488Q1 1424 M3488B1 |
256 X 256 DIFGITAL SWITCHING MATRIX
From old datasheet system
256 X 256 DIFGITAL SWITCHING MATRIX
|
ST Microelectronics
STMicroelectronics
|
| X9268US24-2.7 X9268UT24-2.7 X9268UT24I-2.7 INTERSI |
Dual Supply/Low Power/256-Tap/2-Wire Bus DUAL 50K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO24
Dual Supply/Low Power/256-Tap/2-Wire Bus 双电低Power/256-Tap/2-Wire巴士
|
Intersil, Corp.
|
| ST230C16C0 |
IC: CONFIGURATION DEVICE 4MBIT, PACKAGE 8SOIC 1600V 410A型相位控制晶闸管采用TO - 200AA（甲，北辰）封装
|
International Rectifier, Corp.
|
| HMN5128JV HMN5128JV-70 HMN5128JV-85 |
Non-Volatile SRAM MODULE 4Mbit (512K x 8-Bit),34Pin-JLCC, 3.3V
|
Hanbit Electronics Co.,Ltd
|
| HMN5128DV-85 HMN5128DV-85I HMN5128DV-70 HMN5128DV- |
Non-Volatile SRAM MODULE 4Mbit (512K x 8-Bit),32Pin-DIP, 3.3V
|
Hanbit Electronics Co.,Ltd
|
| W28F641TT80L W28F641TB80L W28F641B W28F641BB80L W2 |
64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY
|
Winbond
|
| M3488B1 M3488 M3488Q1 |
256 x 256 DIGITAL SWITCHING MATRIX
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| LH5420-P-35 LH5420-P-30 LH5420-P-25 |
256 x 36 x 2 Bidirectional FIFO 256 × 36 × 2双向先进先出
|
Sharp Corporation
Sharp, Corp.
|
